Publications

Organic field-effect transistors (OFETs) have been extensively studied over the past decades because of their suitability for low-cost, large-area, and flexible electronics. However, improvements are needed to satisfy the demands of high-speed applications. The switching speed of a logic device is affected by the charge-carrier mobility (µ) and the square of the channel length (L) at a given gate–source bias. Therefore, increasing µ and/or reducing L are crucial for achieving high-speed OFET-based digital circuits. In this study, an n-type OFET is fabricated with increased switching speed via a dual-role approach involving solution-grown, highly ordered single-crystalline N,N’-dioctyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C8) wires, which serve as a mask for short-channel formation up to the microscale and an active layer with enhanced charge mobility. Additionally, the performance of the n-type short-channel OFET and resistive-load-type inverters is evaluated. For comparative purposes, long-channel (50 µm) devices with PTCDI-C8 wires and short-channel devices with a PTCDI-C8 film are fabricated and the device performance is analyzed. The short-channel device with the PTCDI-C8 wires exhibits a significantly higher switching speed. Thus, the dual-role approach is a simple and straightforward method for fabricating short-channel devices, paving the way for further advancements in OFET technology requiring high switching speeds.