Engineering a Solution-Processed In2O3 TFT With Improved Ambient Stability via MoO3 Doping

Jae-Yun Lee+, Gergely Tarsoly+, Xiao-Lin Wang, Han-Lin Zhao, Kwan-Jun Heo and Sung-Jin Kim

+Equal contribution

IEEE Transactions on Electron Devices 2024 71 3 1946–1950. DOI: 10.1109/TED.2024.3360186


The solution processing of metal–oxide–semiconductor devices is a less energy-intensive route for fabricating transparent, high-performance electronics for the display industry. On the other hand, the poor long-term stability of these solution-processed thin films limits their wide-scale adoption. One possible way of improving the stability of the devices is doping the semiconductor film with another metal oxide. This letter reports the fabrication of solution-processed indium oxide films with and without molybdenum (VI) oxide doping and the device characteristics immediately after fabrication and after 30 days of storage. The results showed that the transistor devices with a pristine indium oxide thin film exhibit a severe drop in the ON-current level and charge carrier mobility and a large change in the threshold voltage. When molybdenum ions were included in the thin film, significant improvement was achieved in the stability of the electronic performance characteristics of the device in terms of the charge carrier mobility and threshold voltage.