Publications

Solution processable metal oxide semiconductors offer opportunities for large area fabrication of transparent logic circuits without requiring expensive vacuum equipment. Indium zinc oxide (IZO) is one of the more popular research targets for use as active layer in thin-film transistors (TFTs). In this paper, we present our results on the fabrication of TFTs with IZO semiconductor film using spin-coating from the 1:1 molar ratio mixed solution of indium nitrate and zinc carbonate. We optimize the device fabrication process by studying the effect of stacking multiple layers on top of each other. The electrical characteristics of the TFTs are found to depend strongly on the number of the spin coating steps employed. The practical applicability of the TFTs is also demonstrated by fabricating a load-type inverter circuit and measuring its electrical response, modeling operation in digital circuitry.