Co-author

Xiao-Lin Wang, Han-Lin Zhao, Fei Shan, Shi-Kai Shi, Jae-Yun Lee, Gergely Tarsoly and Sung-Jin Kim, "Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures" Applied Surface Science 2024 669 160576 DOI: 10.1016/j.apsusc.2024.160576

Soochang You, Anvar Tukhtaev, Gergely Tarsoly, Han Lin Zhao, Xiao Lin Wang, Fei Shan, Jae‑Yun Lee, Jin Hee Lee, Sung Il Jang, Yong Jin Jeong and Sung‑Jin Kim, "Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors" Journal of Electrical Engineering & Technology 2024 19 4 2521-2526 DOI: 10.1007/s42835-023-01689-4

Fei Shan, Jae-Yun Lee, Gergely Tarsoly, Han-Lin Zhao, Xiao-Lin Wang, Tukhtaev Anvar, Suchang Yoo and Sung-Jin Kim, "Enhancement of Electrical Stability in Solution Processed In2O3 TFT by an Oxygen Plasma-Assisted Treatment" IEEE Transactions on Electron Devices 2023 70 11 5678-5684 DOI: 10.1109/TED.2023.3306727

Han-Lin Zhao, Gergely Tarsoly, Fei Shan, Xiao-Lin Wang, Jae-Yun Lee, Yong Jin Jeong and Sung-Jin Kim, "Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors" Scientific Reports 2022 12 19497 DOI: 10.1038/s41598-022-24093-w

Gergely Tarsoly⁺, Jae-Yun Lee⁺, Fei Shan and Sung-Jin Kim, "Switching facilitated by the simultaneous formation of oxygen vacancies and conductive filaments in resistive memory devices based on thermally annealed TiO2/a-IGZO bilayers" Applied Surface Science 2022 601 154281 DOI: 10.1016/j.apsusc.2022.154281

Jae-Yun Lee⁺, Gergely Tarsoly⁺, Suchang Yoo⁺, Fei Shan, Heung Gyoon Ryu, Seungkeun Choi, Yong Jin Jeong and Sung-Jin Kim, "Hysteresis and turn-on voltage tailoring of indium gallium zinc oxide transistors by employing a sandwiched structure with indium oxide" Materials Letters 2022 322 132504 DOI: 10.1016/j.matlet.2022.132504

Jae-Yun Lee⁺, Gergely Tarsoly⁺, Fei Shan and Sung-Jin Kim, "Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters" IEEE Transactions on Electron Devices 2022 69 4 1833-1888 DOI: 10.1109/TED.2022.3144123