Xiao-Lin Wang, Han-Lin Zhao, Fei Shan, Shi-Kai Shi, Jae-Yun Lee, Gergely Tarsoly and Sung-Jin Kim, "Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures" Applied Surface Science 2024 669 160576 DOI: 10.1016/j.apsusc.2024.160576
Soochang You+, Anvar Tukhtaev+, Gergely Tarsoly, Han Lin Zhao, Xiao Lin Wang, Fei Shan, Jae‑Yun Lee, Jin Hee Lee, Sung Il Jang, Yong Jin Jeong and Sung‑Jin Kim, "Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors" Journal of Electrical Engineering & Technology 2024 19 4 2521-2526 DOI: 10.1007/s42835-023-01689-4
Fei Shan, Jae-Yun Lee, Gergely Tarsoly, Han-Lin Zhao, Xiao-Lin Wang, Tukhtaev Anvar, Suchang Yoo and Sung-Jin Kim, "Enhancement of Electrical Stability in Solution Processed In2O3 TFT by an Oxygen Plasma-Assisted Treatment" IEEE Transactions on Electron Devices 2023 70 11 5678-5684 DOI: 10.1109/TED.2023.3306727
Han-Lin Zhao, Gergely Tarsoly, Fei Shan, Xiao-Lin Wang, Jae-Yun Lee, Yong Jin Jeong and Sung-Jin Kim, "Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors" Scientific Reports 2022 12 19497 DOI: 10.1038/s41598-022-24093-w
Gergely Tarsoly+, Jae-Yun Lee+, Fei Shan and Sung-Jin Kim, "Switching facilitated by the simultaneous formation of oxygen vacancies and conductive filaments in resistive memory devices based on thermally annealed TiO2/a-IGZO bilayers" Applied Surface Science 2022 601 154281 DOI: 10.1016/j.apsusc.2022.154281
Jae-Yun Lee+, Gergely Tarsoly+, Suchang Yoo+, Fei Shan, Heung Gyoon Ryu, Seungkeun Choi, Yong Jin Jeong and Sung-Jin Kim, "Hysteresis and turn-on voltage tailoring of indium gallium zinc oxide transistors by employing a sandwiched structure with indium oxide" Materials Letters 2022 322 132504 DOI: 10.1016/j.matlet.2022.132504
Jae-Yun Lee+, Gergely Tarsoly+, Fei Shan and Sung-Jin Kim, "Optimizing Oxygen Plasma Treatment Time to Improve the Characteristics of a-IGZO Thin-Film Transistors and Resistive-Load Inverters" IEEE Transactions on Electron Devices 2022 69 4 1833-1888 DOI: 10.1109/TED.2022.3144123
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