Co-author

Papers coauthored with Xiao-Lin Wang

Xiao-Lin Wang, Han-Lin Zhao, Fei Shan, Shi-Kai Shi, Jae-Yun Lee, Gergely Tarsoly and Sung-Jin Kim, "Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures" Applied Surface Science 2024 669 160576 DOI: 10.1016/j.apsusc.2024.160576

Gergely Tarsoly, Han-Lin Zhao, Xiao-Lin Wang, Jae-Yun Lee and Sung-Jin Kim, "Optimized responsivity of a phototransistor using graphene oxide-doped solution-processed indium oxide active layer toward neuromorphic applications" Journal of Materials Chemistry C 2024 12 12090-12098 DOI: 10.1039/d4tc01780c

Jae-Yun Lee+, Gergely Tarsoly+, Xiao-Lin Wang, Han-Lin Zhao, Kwan-Jun Heo and Sung-Jin Kim, "Engineering a Solution-Processed In2O3 TFT With Improved Ambient Stability via MoO3 Doping" IEEE Transactions on Electron Devices 2024 71 3 1946–1950 DOI: 10.1109/TED.2024.3360186

Soochang You, Anvar Tukhtaev, Gergely Tarsoly, Han Lin Zhao, Xiao Lin Wang, Fei Shan, Jae‑Yun Lee, Jin Hee Lee, Sung Il Jang, Yong Jin Jeong and Sung‑Jin Kim, "Electrical Characteristics of Multi-Layered, Solution-Processed Indium Zinc Oxide Thin-Film Transistors" Journal of Electrical Engineering & Technology 2024 19 4 2521-2526 DOI: 10.1007/s42835-023-01689-4

Xiao-Lin Wang, Han-Lin Zhao, Gergely Tarsoly, Hang Zhu, Jae-Yun Lee and Sung-Jin Kim, "Effect of the gas flow rate in the focused-oxygen plasma treatment of solution-processed indium oxide thin film transistors" Applied Surface Science 2024 643 15 158651 DOI: 10.1016/j.apsusc.2023.158651

Fei Shan, Jae-Yun Lee, Gergely Tarsoly, Han-Lin Zhao, Xiao-Lin Wang, Tukhtaev Anvar, Suchang Yoo and Sung-Jin Kim, "Enhancement of Electrical Stability in Solution Processed In2O3 TFT by an Oxygen Plasma-Assisted Treatment" IEEE Transactions on Electron Devices 2023 70 11 5678-5684 DOI: 10.1109/TED.2023.3306727

Han-Lin Zhao, Gergely Tarsoly, Fei Shan, Xiao-Lin Wang, Jae-Yun Lee, Yong Jin Jeong and Sung-Jin Kim, "Impact of pre-annealing process on electrical properties and stability of indium zinc oxide thin-film transistors" Scientific Reports 2022 12 19497 DOI: 10.1038/s41598-022-24093-w

+Equal contribution